師資
個(gè)人簡(jiǎn)介
Yury Illarionov教授于1988年出生于列寧格勒（現(xiàn)圣彼得堡）。他在Peter the Great St-Petersburg Polytechnic University （俄羅斯）學(xué)習(xí)固體物理學(xué)，并分別于 2009 年和 2011 年在其獲得理學(xué)學(xué)士和理學(xué)碩士學(xué)位。2010 年到 2012 年，他獲得(FAME) Erasmus Mundus獎(jiǎng)學(xué)金項(xiàng)目，在Grenoble INP（法國(guó)）和University of Augsburg（德國(guó)）學(xué)習(xí)先進(jìn)材料科學(xué)，并于 2012 年 9 月 獲得先進(jìn)材料科學(xué)歐洲碩士學(xué)位（雙碩士學(xué)位）。 2015 年 1 月，他獲得了Ioffe Institute（俄羅斯）的半導(dǎo)體物理學(xué)博士學(xué)位，并于 2015 年 12 月獲得了 TU Wien（奧地利）的第二個(gè)博士學(xué)位。2016-2022 年，他一直在 TU Wien（奧地利）微電子研究所擔(dān)任博士后研究員，一直以來(lái)大家知道該研究所有一個(gè)很強(qiáng)的 TCAD 模擬中心，但也由于 Yury Illarionov教授在 二維電子學(xué)的開(kāi)創(chuàng)性研究而在世界范圍內(nèi)被熟知。 Yury Illarionov 教授已發(fā)表了 90 多篇論文，包括在 Nature Electronics、Nature Communications、Advanced Materials、ACS Nano 等頂級(jí)期刊上發(fā)表的論文（其中第一作者或通訊作者超過(guò) 25 篇）。2020年獲得IEEE高級(jí)會(huì)員稱號(hào)，并擔(dān)任金磚國(guó)家青年科學(xué)家論壇俄羅斯官方代表。他還擁有非常廣泛的國(guó)際合作網(wǎng)絡(luò)，其中包括來(lái)自俄羅斯、中國(guó)、美國(guó)、德國(guó)和其他國(guó)家的頂尖科學(xué)家。Yury Illarionov教授于2023年4月加入南方科技大學(xué)。
更多關(guān)于Yury Illarionov教授的介紹可以查看Google scholar:https://scholar.google.ca/citations?user=1OgaLoQAAAAJ&hl=en
教育背景
2015年12月 獲得技術(shù)科學(xué)博士學(xué)位 (Dr. tech.) Technical University of Vienna (TU Wien), Vienna, Austria.
2015年1月 獲得物理和數(shù)學(xué)科學(xué)（半導(dǎo)體物理學(xué)） 博士學(xué)位 Ioffe Institute, St-Petersburg, Russia.
2012年9月 獲得先進(jìn)材料科學(xué)歐洲碩士學(xué)位（第二個(gè)碩士學(xué)位）Erasmus Mundus FAME Master Program, Grenoble INP, France (2010-2011) and University of Augsburg, Germany (2011-2012), Diploma internship: Singapore Institute of Manufacturing Technology (SIMTech), Singapore (February-July 2012).
2011年6月 獲得工程和科技（技術(shù)物理學(xué)）碩士學(xué)位 [卓越畢業(yè)生] Peter the Great St-Petersburg Polytechnic University, St-Petersburg, Russia, Diploma internship: Ioffe Institute, St-Petersburg, Russia.
2009年6月 獲得工程和科技（技術(shù)物理學(xué)）學(xué)士學(xué)位 [卓越畢業(yè)生] Peter the Great St-Petersburg Polytechnic University, St-Petersburg, Russia, Diploma internship: Ioffe Institute, St-Petersburg, Russia.
全職科研工作
2023年4月至今 南方科技大學(xué)材料科學(xué)與工程系 副教授
2016年1月至2022年12月 維也納Institute for Microelectronics (TU Wien) 博士后研究員
2013年1月至2015年12月 維也納Institute for Microelectronics (TU Wien) 博士
2011年11月至2015年1月 圣彼得堡Ioffe Institute 博士
部分獲獎(jiǎng)和榮譽(yù)情況
2023 Co-supervisor of Hannspeter-Winter Prize for a dissertation with innovation character and outstanding scientific quality
2022 Co-supervisor of Austrian Federal President award for academic excellence
2021 Co-supervisor of IEEE Electron Devices Society PhD Student Fellowship recipient
2020 Nature Communications paper featured by Editors & in top 50 Physics papers of 2020
2020 Member of Russian delegation in BRICS Young Scientist Forum (Material Science panel)
2020 Co-supervisor of Best Student Paper Award at IEEE Device Research Conference (DRC)
2020 IEEE Senior Member
2019 Best poster award at the 4th International Conference on Physics of 2D Crystals (ICP2DC4), Hangzhou, China
2010 Erasmus Mundus scholarship award by the European Commission
2005 Gold medal award “for outstanding academic achievements” at high school (given by the Russian Ministry of Education)
研究方向
二維材料為納米級(jí)FETs和其它不需要極小尺寸的電子器件（如光電和傳感器）提供了巨大的機(jī)會(huì)。然而，所有這些器件還需要合適的柵極絕緣體，這些絕緣體將與 2D 通道形成清晰的界面，包含低密度缺陷并允許在技術(shù)可行的溫度下進(jìn)行可擴(kuò)展的增長(zhǎng)。
Yury Illarionov 教授的團(tuán)隊(duì)專注于為不同類型的二維器件尋找合適的絕緣體，并致力于以下研究主題：
- 制備具有不同二維通道和新型絕緣體（如氟化物和天然氧化物）的場(chǎng)效應(yīng)晶體管、光電探測(cè)器和傳感器
- 在廣泛的溫度范圍內(nèi)對(duì)這些器件的性能和可靠性進(jìn)行高級(jí)表征
- 器件性能和可靠性的高級(jí) TCAD 模擬，以最終確定哪些絕緣體和 2D 通道的組合能夠?qū)崿F(xiàn)最具競(jìng)爭(zhēng)力的晶體管、光電探測(cè)器和傳感器
- 為最有前景的器件開(kāi)發(fā)可擴(kuò)展的制備技術(shù)，這也符合技術(shù)上可行的熱預(yù)算（與行業(yè)合作對(duì)于這個(gè)主題特別有價(jià)值）
代表性論文
1. Knobloch T.$, Uzlu B., Illarionov Yu.Yu.*, Wang Z., Otto M., Filipovic L., Waltl M., Neumaier D., Lemme M.*, Grasser T.*, “Optimizing the Stability of FETs Based on Two-Dimensional Materials by Fermi Level Tuning”, Nature Electronics, 5(6), 356-366 (2022).
2. Illarionov Yu.Yu.*, Knobloch T.$, Grasser T.*, “Inorganic Molecular Crystals for 2D
Electronics”, Nature Electronics, 4, 870-871 (2021). [News and Views]
3. Illarionov Yu.Yu.*, Knobloch T.$, Grasser T.* “Crystalline Insulators for Scalable 2D, Nanoelectronics”, Solid-State Electronics, 108043, 185 (2021).
4. Knobloch T.$*, Illarionov Yu.Yu., Ducry F., Schleich C., Wachter S., Watanabe K., Taniguchi T., Mueller T., Waltl M., Lanza M., Vexler M.I., Luisier M., Grasser T.* “The Performance Limits of Hexagonal Boron Nitride as an Insulator for Scaled CMOS Devices Based on Two-Dimensional Materials”, Nature Electronics, 4 (2), 98-108 (2021). $Co-supervised PhD student
5. Illarionov Yu.Yu.*, Knobloch T., Grasser T.* “Native High-k Oxides for 2D Transistors”, Nature Electronics, 3(8), 442 (2020). [News and Views]
6. Illarionov Yu.Yu.*, Knobloch T., Lanza M., Akinwande D., Vexler M.I., Mueller T., Lemme M., Fiori G., Schwierz F., Grasser T.*, “Insulators for 2D Nanoelectronics: the Gap to Bridge”, Nature Communications, 11, 3385 (2020). [Featured by Editors, Top 50 Physics articles in 2020]
7. Illarionov Yu.Yu.*, Banshchikov A.G., Polyushkin D.K., Wachter S., Knobloch T., Thesberg M., Vexler M.I., Waltl M., Lanza M., Sokolov N.S., Mueller T., Grasser T.*, “Reliability of Scalable MoS2 FETs with 2nm Crystalline CaF2 Insulators”, 2D Materials, v.6, p. 045004 (2019).
8. Illarionov Yu.Yu.*, Banshchikov A.G., Polyushkin D.K., Wachter S., Knobloch T.$, Thesberg M., Stoeger-Pollach M., Steiger-Thirsfeld A., Vexler M.I., Waltl M., Sokolov N.S., Mueller T., Grasser T.*, “Ultrathin Calcium Fluoride Insulators for Two-Dimensional Field-Effect Transistors”, Nature Electronics, v. 2, pp. 230-235 (2019).
9. Illarionov Yu.Yu.*, Knobloch T.$, Waltl M., Rzepa G., Pospischil A., Polyushkin D.K., Furchi M.M., Mueller T., Grasser T.*, “Energetic Mapping of Oxide Traps in MoS2 Field-Effect Transistors”, 2D Materials, v.4, No. 2, 025108 (2017).
10. Illarionov Yu.Yu.*, Waltl M., Rzepa G., Knobloch T.$, Kim J.-S., Akinwande D., Grasser T., “Highly-Stable Black Phosphorus Field-Effect Transistors with Low Density of Oxide Traps”, npj 2D Materials and Applications, v.1, 23 (2017).
11. Illarionov Yu.Yu.*, Smithe K.K.H., Waltl M., Knobloch T.$, Pop E., Grasser T., “Improved Hysteresis and Reliability of MoS2 Transistors with High-Quality CVD Growth and Al2O3 Encapsulation”, IEEE Electron Device Letters, v. 38, No. 12, pp. 1763-1766 (2017).
12. Illarionov Yu.Yu.*, Waltl M., Rzepa G., Kim J.-S., Kim S., Dodabalapur A., Akinwande D., Grasser T.*, “Long-Term Stability and Reliability of Black Phosphorus Field-Effect Transistors”, ACS Nano, v. 10, No. 10, pp. 9543–9549 (2016).
13. Illarionov Yu.Yu.*, Rzepa G., Waltl M., Knobloch T., Grill A., Furchi M.M., Mueller T., Grasser T.*, “The Role of Charge Trapping in MoS2/SiO2 and MoS2/hBN Field-Effect Transistors”, 2D Materials, v. 3, No. 3, 035004 (2016).
14. Illarionov Yu.Yu.*, Smith A.D.*, Vaziri S.*, Ostling M.*, Mueller T.*, Lemme M.C.*, Grasser T.*, “Hot Carrier Degradation and Bias-Temperature Instability in Single-Layer Graphene Field-Effect Transistors: Similarities and Differences”, IEEE Transactions on Electron Devices, v. 62, No. 11, pp. 3876–3881 (2015).
15. Illarionov Yu.Yu.*, Bina M.*, Tyaginov S.*, Rott K.*, Kaczer B.*, Reisinger H.*, Grasser T.*, “Extraction of the Lateral Position of Border Traps in Nanoscale MOSFETs”, IEEE Transactions on Electron Devices, v. 62, No. 9, pp. 2730–2737 (2015).
16. Illarionov Yu.Yu.*, Vexler M.I., Karner M., Tyaginov S.E., Cervenka J., Grasser T., “TCAD Simulation of Tunneling Leakage Current in CaF2/Si(111) MIS Structures”, Current Applied Physics, v. 15, pp. 78-83 (2015).
17. Illarionov Yu.Yu., Smith A., Vaziri S., Ostling M., Mueller T., Lemme M., Grasser T., “Bias-Temperature Instability in Single-Layer Graphene Field-Effect Transistors”, Applied Physics Letters, v. 105, No. 14, 143507 (2014).
18. Illarionov Yu.Yu.*, Vexler M.I., Fedorov V.V., Suturin S.M., Sokolov N.S., “Electrical and Optical Characterization of Au/CaF2/p-Si(111) Tunnel-Injection Diodes”, Journal of Applied Physics, v. 115, 223706 (2014).
19. Illarionov Yu.Yu.*, Vexler M.I., Fedorov V.V., Suturin S.M., Sokolov N.S., “Light Emission from the Au/CaF2/p-Si(111) Capacitors: Evidence for an Elastic Electron Tunneling through a Thin (1-2 nm) Fluoride Layer”, Thin Solid Films, v. 545, pp. 580-583 (2013).
20. Illarionov Yu.Yu.*, Vexler M.I., Suturin S.M., Fedorov V.V., Sokolov N.S., Tsutsui K., Takahashi K., “Electron Tunneling in MIS Capacitors with the MBE-Grown Fluoride Layers on Si(111) and Ge(111): Role of Transverse Momentum Conservation”, Microelectronics Engineering (Open special issue “INFOS 2011”), v. 88, No. 7, pp. 1291-1294 (2011).