Faculty
Biography
Associate Professor, Department of Materials Science and Engineering, Southern University of Science and Technology. He was born in Leningrad (now St-Petersburg) in 1988. He studied solid state physics in Peter the Great St-Petersburg Polytechnic University (Russia) where he received the B.Sc. and M.Sc. degrees in 2009 and 2011, respectively. From 2010 to 2012 he studied advanced material science in Grenoble INP (France) and University of Augsburg (Germany) in frameworks of Functionalized Advanced Materials and Engineering (FAME) Erasmus Mundus program and in September 2012 received a double European M.Sc. degree. In January 2015 he received the PhD degree in semiconductor physics from Ioffe Institute (Russia) and in December 2015 his second PhD degree degree from TU Wien (Austria). In 2016-2022 he had been working as a postdoc researcher in the Institute for Microelectronics of TU Wien (Austria) which has been known as a strong TCAD modeling center but due to Yury’s work also became world-recognized for pioneering research on 2D electronics. Prof. Yury Illarionov has already coauthored more than 90 contributions including papers in top journals like Nature Electronics, Nature Communications, Advanced Materials, ACS Nano among others (>25 as the first or corresponding author). In 2020 he has got IEEE Senior Member title and also served as an official Russian delegate for BRICS Young Scientist Forum. He also has a very broad international collaboration network which includes top scientists from Russia, China, USA, Germany and other countries.
Educational Background
Dec. 2015 Ph.D. (Dr. tech.), Technical Sciences,
Technical University of Vienna (TU Wien), Vienna, Austria
Jan. 2015 Ph.D., Physical and Mathematical Sciences (Semiconductor Physics)
Ioffe Institute, St-Petersburg, Russia
Sep. 2012 Double European M.Sc., Advanced Material Science
Erasmus Mundus FAME Master Program
Grenoble INP, France (2010-2011) and University of Augsburg, Germany (2011-2012)
Diploma internship: Singapore Institute of Manufacturing Technology (SIMTech), Singapore (February-July 2012)
Jun. 2011 M.Sc., Engineering and Technology (Technical Physics) [with Honors]
Peter the Great St-Petersburg Polytechnic University, St-Petersburg, Russia
Diploma internship: Ioffe Institute, St-Petersburg, Russia
Jun. 2009 B.Sc., Engineering and Technology (Technical Physics) [with Honors]
Peter the Great St-Petersburg Polytechnic University, St-Petersburg, Russia
Diploma internship: Ioffe Institute, St-Petersburg, Russia
Full-time research positions
Apr. 2023 till now Associate Professor, Department of Materials Science and Engineering, Southern University of Science and Technology (SUSTech), Shenzhen, China.
Jan. 2016 - Dec. 2022 Postdoc researcher, Institute for Microelectronics (TU Wien), Vienna, Austria
Jan. 2013 - Dec. 2015 PhD student, Institute for Microelectronics (TU Wien), Vienna, Austria
Nov. 2011 - Jan. 2015 PhD student, Ioffe Institute, St-Petersburg, Russia
Selected Honor & Awards
2023 Co-supervisor of Hannspeter-Winter Prize for a dissertation with innovation character and outstanding scientific quality
2022 Co-supervisor of Austrian Federal President award for academic excellence
2021 Co-supervisor of IEEE Electron Devices Society PhD Student Fellowship recipient
2020 Nature Communications paper featured by Editors & in top 50 Physics papers of 2020
2020 Member of Russian delegation in BRICS Young Scientist Forum (Material Science panel)
2020 Co-supervisor of Best Student Paper Award at IEEE Device Research Conference (DRC)
2020 IEEE Senior Member
2019 Best poster award at the 4th International Conference on Physics of 2D Crystals (ICP2DC4), Hangzhou, China
2010 Erasmus Mundus scholarship award by the European Commission
2005 Gold medal award “for outstanding academic achievements” at high school (given by the Russian Ministry of Education)
Research
Two-dimensional (2D) materials offer great opportunities for both nanoscale FETs and other electronic devices which do not require aggressive scaling, such as optoelectronics and sensors. However, all these devices also require suitable gate insulators which would form sharp interfaces with 2D channels, contain low density of defects and allow scalable growth at technologically feasible temperatures.
The group of Prof. Yury Illarionov focuses on finding suitable insulators for different types of 2D devices and work on the following research themes:
- Fabrication of filed-effect transistors, photodetectors and sensors with different 2D channels and new insulators such as fluorides and native oxides
- Advanced characterization of the performance and reliability of these devices in a broad range of temperatures
- Advanced TCAD modeling of device performance and reliability to finally determine which combinations of insulators and 2D channels would enable the most competitive transistors, photodetectors and sensors
- Development of scalable fabrication techniques for the most promising devices, which would also fit technologically feasible thermal budgets (cooperation with industry would be especially valuable for this topic)
Key publications
1. Knobloch T.$, Uzlu B., Illarionov Yu.Yu.*, Wang Z., Otto M., Filipovic L., Waltl M., Neumaier D., Lemme M.*, Grasser T.*, “Optimizing the Stability of FETs Based on Two-Dimensional Materials by Fermi Level Tuning”, Nature Electronics, 5(6), 356-366 (2022).
2. Illarionov Yu.Yu.*, Knobloch T.$, Grasser T.*, “Inorganic Molecular Crystals for 2D Electronics”, Nature Electronics, 4, 870-871 (2021). [News and Views]
3. Illarionov Yu.Yu.*, Knobloch T.$, Grasser T.* “Crystalline Insulators for Scalable 2D Nanoelectronics”, Solid-State Electronics, 108043, 185 (2021).
4. Knobloch T.$*, Illarionov Yu.Yu., Ducry F., Schleich C., Wachter S., Watanabe K., Taniguchi T., Mueller T., Waltl M., Lanza M., Vexler M.I., Luisier M., Grasser T.* “The Performance Limits of Hexagonal Boron Nitride as an Insulator for Scaled CMOS Devices Based on Two-Dimensional Materials”, Nature Electronics, 4 (2), 98-108 (2021). $Co-supervised PhD student
5. Illarionov Yu.Yu.*, Knobloch T., Grasser T.* “Native High-k Oxides for 2D Transistors”, Nature Electronics, 3(8), 442 (2020). [News and Views]
6. Illarionov Yu.Yu.*, Knobloch T., Lanza M., Akinwande D., Vexler M.I., Mueller T., Lemme M., Fiori G., Schwierz F., Grasser T.*, “Insulators for 2D Nanoelectronics: the Gap to Bridge”, Nature Communications, 11, 3385 (2020). [Featured by Editors, Top 50 Physics articles in 2020]
7. Illarionov Yu.Yu.*, Banshchikov A.G., Polyushkin D.K., Wachter S., Knobloch T., Thesberg M., Vexler M.I., Waltl M., Lanza M., Sokolov N.S., Mueller T., Grasser T.*, “Reliability of Scalable MoS2 FETs with 2nm Crystalline CaF2 Insulators”, 2D Materials, v.6, p. 045004 (2019).
8. Illarionov Yu.Yu.*, Banshchikov A.G., Polyushkin D.K., Wachter S., Knobloch T.$, Thesberg M., Stoeger-Pollach M., Steiger-Thirsfeld A., Vexler M.I., Waltl M., Sokolov N.S., Mueller T., Grasser T.*, “Ultrathin Calcium Fluoride Insulators for Two-Dimensional Field-Effect Transistors”, Nature Electronics, v. 2, pp. 230-235 (2019).
9. Illarionov Yu.Yu.*, Knobloch T.$, Waltl M., Rzepa G., Pospischil A., Polyushkin D.K., Furchi M.M., Mueller T., Grasser T.*, “Energetic Mapping of Oxide Traps in MoS2 Field-Effect Transistors”, 2D Materials, v.4, No. 2, 025108 (2017).
10. Illarionov Yu.Yu.*, Waltl M., Rzepa G., Knobloch T.$, Kim J.-S., Akinwande D., Grasser T., “Highly-Stable Black Phosphorus Field-Effect Transistors with Low Density of Oxide Traps”, npj 2D Materials and Applications, v.1, 23 (2017).
11. Illarionov Yu.Yu.*, Smithe K.K.H., Waltl M., Knobloch T.$, Pop E., Grasser T., “Improved Hysteresis and Reliability of MoS2 Transistors with High-Quality CVD Growth and Al2O3 Encapsulation”, IEEE Electron Device Letters, v. 38, No. 12, pp. 1763-1766 (2017).
12. Illarionov Yu.Yu.*, Waltl M., Rzepa G., Kim J.-S., Kim S., Dodabalapur A., Akinwande D., Grasser T.*, “Long-Term Stability and Reliability of Black Phosphorus Field-Effect Transistors”, ACS Nano, v. 10, No. 10, pp. 9543–9549 (2016).
13. Illarionov Yu.Yu.*, Rzepa G., Waltl M., Knobloch T., Grill A., Furchi M.M., Mueller T., Grasser T.*, “The Role of Charge Trapping in MoS2/SiO2 and MoS2/hBN Field-Effect Transistors”, 2D Materials, v. 3, No. 3, 035004 (2016).
14. Illarionov Yu.Yu.*, Smith A.D.*, Vaziri S.*, Ostling M.*, Mueller T.*, Lemme M.C.*, Grasser T.*, “Hot Carrier Degradation and Bias-Temperature Instability in Single-Layer Graphene Field-Effect Transistors: Similarities and Differences”, IEEE Transactions on Electron Devices, v. 62, No. 11, pp. 3876–3881 (2015).
15. Illarionov Yu.Yu.*, Bina M.*, Tyaginov S.*, Rott K.*, Kaczer B.*, Reisinger H.*, Grasser T.*, “Extraction of the Lateral Position of Border Traps in Nanoscale MOSFETs”, IEEE Transactions on Electron Devices, v. 62, No. 9, pp. 2730–2737 (2015).
16. Illarionov Yu.Yu.*, Vexler M.I., Karner M., Tyaginov S.E., Cervenka J., Grasser T., “TCAD Simulation of Tunneling Leakage Current in CaF2/Si(111) MIS Structures”, Current Applied Physics, v. 15, pp. 78-83 (2015).
17. Illarionov Yu.Yu., Smith A., Vaziri S., Ostling M., Mueller T., Lemme M., Grasser T., “Bias-Temperature Instability in Single-Layer Graphene Field-Effect Transistors”, Applied Physics Letters, v. 105, No. 14, 143507 (2014).
18. Illarionov Yu.Yu.*, Vexler M.I., Fedorov V.V., Suturin S.M., Sokolov N.S., “Electrical and Optical Characterization of Au/CaF2/p-Si(111) Tunnel-Injection Diodes”, Journal of Applied Physics, v. 115, 223706 (2014).
19. Illarionov Yu.Yu.*, Vexler M.I., Fedorov V.V., Suturin S.M., Sokolov N.S., “Light Emission from the Au/CaF2/p-Si(111) Capacitors: Evidence for an Elastic Electron Tunneling through a Thin (1-2 nm) Fluoride Layer”, Thin Solid Films, v. 545, pp. 580-583 (2013).
20. Illarionov Yu.Yu.*, Vexler M.I., Suturin S.M., Fedorov V.V., Sokolov N.S., Tsutsui K., Takahashi K., “Electron Tunneling in MIS Capacitors with the MBE-Grown Fluoride Layers on Si(111) and Ge(111): Role of Transverse Momentum Conservation”, Microelectronics Engineering (Open special issue “INFOS 2011”), v. 88, No. 7, pp. 1291-1294 (2011).